? 2008 ixys corporation, all rights reserved IXGH10N170 ixgt10n170 ds98992a(10/08) high voltage igbt v ces = 1700v i c90 = 10a v ce(sat) 4.0v symbol test conditions maximum ratings v ces t c = 25c to 150c 1700 v v cgr t j = 25c to 150c, r ge = 1m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 20 a i c90 t c = 90c 10 a i cm t c = 25c, 1ms 70 a ssoa v ge = 15v, t vj = 125c, r g = 16 i cm = 20 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 110 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 50 a v ge = 0v t j = 125c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c90 , v ge = 15v, note 1 2.7 4.0 v t j = 125c 3.4 g = gate c = collector e = emitter tab = collector to-247 (ixgh) g c e c (tab) to-268 (ixgt) g e c (tab) features z international standard packages jedec to-268 and jedec to-247 ad z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole)
ixys reserves the right to change limits, test conditions, and dimensions. IXGH10N170 ixgt10n170 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 10a, v ce = 10v, note 1 3.8 6.3 s i c(on) v ce = 10v, v ge = 10v 33 a c ies 700 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 40 pf c res 14 pf q g 32 nc q ge i c = 10a, v ge = 15v, v ce = 0.5 ? v ces 4 nc q gc 16 nc t d(on) 30 ns t r 69 ns t d(off) 132 ns t f 600 ns t d(on) 30 ns t ri 270 ns t d(off) 135 ns t fi 495 ns r thjc 1.1 c/w r thcs (to-247) 0.25 c/w min recommended footprint note 1: pulse test, t 300 s, duty cycle, d 2%. to-247 ad outline terminals: 1 - gate 2 - drain 1 2 3 resistive load, t j = 25c i c = 10a, v ge = 15v v ce = 850v, r g = 16 resistive load, t j = 125c i c = 10a, v ge = 15v v ce = 850v, r g = 16 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 to-268 outline terminals: 1 - gate 2 - drain
? 2008 ixys corporation, all rights reserved IXGH10N170 ixgt10n170 ixys ref: g_10n170(3n)10-13-08-a fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 20a i c =10a i c = 5a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 20a t j = 25oc 5a 10a fig. 6. input admittance 0 5 10 15 20 25 30 35 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH10N170 ixgt10n170 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 11. maximum transient thermal impedance 2.0 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 4 8 121620242832 q g - nanocoulombs v ge - volts v ce = 850v i c = 10a i g = 10ma fig. 9. reverse-bias safe operating area 0 2 4 6 8 10 12 14 16 18 20 22 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 150oc r g = 16 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved IXGH10N170 ixgt10n170 ixys ref: g_10n170(3n)10-13-08-a fig. 13. resistive turn-on rise time vs. collector current 0 50 100 150 200 250 300 350 4 6 8 101214161820 i c - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 16 ? v ge = 15v v ce = 850v fig. 14. resistive turn-on switching times vs. gate resistance 240 260 280 300 320 340 360 380 400 10 20 30 40 50 60 70 80 90 100 r g - ohms t r - nanoseconds 25 30 35 40 45 50 55 60 65 t d(on) - nanoseconds t r t d(on ) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 10a i c = 20a fig. 15. resistive turn-off switching times vs. junction temperature 100 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 90 100 110 120 130 140 150 160 t d(off) - nanoseconds t f t d(off) - - - - r g = 16 ? , v ge = 15v v ce = 850v i c = 20a i c = 10a fig. 16. resistive turn-off switching times vs. collector current 0 200 400 600 800 1000 1200 1400 4 6 8 101214161820 i c - amperes t f - nanoseconds 70 90 110 130 150 170 190 210 t d(off) - nanoseconds t f t d(off ) - - - - r g = 16 ? , v ge = 15v v ce = 850v t j = 125oc, 25oc fig. 12. resistive turn-on rise time vs. junction temperature 0 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 16 ? v ge = 15v v ce = 850v i c = 10a i c = 20a fig. 17. resistive turn-off switching times vs. gate resistance 200 250 300 350 400 450 500 550 600 650 700 10 20 30 40 50 60 70 80 90 100 r g - ohms t f - nanoseconds 0 50 100 150 200 250 300 350 400 450 500 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 20a i c = 10a
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